Our proven temporary wafer bonding systems are designed to fit into a variety of process scenarios with minimal disruption. We offer thin wafer handling solutions for low-volume R&D environments, as well as materials and processes that work with leading equipment vendors to provide fully automated solutions for high-volume manufacturing.
Brewer Science temporary wafer bonding systems allow for safe handling and transport of ultrathin wafers during rigorous backside processing steps.
Brewer Science was one of the first companies to recognize the potential of temporary wafer bonding for ultrathin wafer handling. Connect with one of our experts today to see how we can optimize your ultrathin wafer handling process.
Ultrathin wafers provide better heat dissipation, take up less space, and offer enhanced connectivity over conventional device wafers. By thinning device wafers after they have been processed, engineers can achieve the performance improvements and form factor reduction demanded by cutting-edge devices.
Ultrathin device wafers are extremely fragile and require a rigid support that allows the wafer to undergo further processing before it is diced and packaged. After surviving harsh processing conditions, the thin wafer must then be separated from the rigid support without resulting in damage.
| Requirements | Challenges |
|---|---|
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Ideal for low-stress applications, the chemical release system involves bonding the device wafer to a perforated carrier for further processing. After processing is completed, the bonded pair is placed in a solvent bath for separation.
Bonding Material: WaferBOND® HT-10.11 materials
| Max Throughput | Thermal Stability | LOW STRESS |
|---|---|---|
| 25 wafers per cycle* | ≤ 220°C |
*Wafers are separated using a batch process
In the thermal release system, the device wafer is bonded to a standard carrier wafer for processing. The wafer pair is later separated by heating and gently sliding the wafers apart.
Bonding Material: WaferBOND® HT-10.11 and HT-10.12 materials
| Max Throughput | Thermal Stability |
|---|---|
| 15 WPH | ≤ 250°C |
The mechanical release system offers low-stress, room-temperature separation of processed wafer pairs. In this system, the bonding material is paired with a release material on the carrier wafer, making it possible to gently separate the wafers.
Bonding Materials: WaferBOND® HT-10.11 material, BrewerBOND® 305 material
Release Materials: BrewerBOND® 510 material or BrewerBOND® 530 material
BrewerBOND® VersaLayer System: BrewerBOND® C1300 series materials with BrewerBOND® T1100 series materials
| Max Throughput | Thermal Stability | LOW STRESS |
|---|---|---|
| 20 WPH | ≤ 400°C |
In the laser release system, the device wafer is bonded to a transparent glass carrier using a bonding material and a release material. Once processing is completed, the pair is separated by exposing the release material with a laser source. Low-stress separation coupled with high throughput make the laser release system suitable for all production environments.
Bonding Material: WaferBOND® HT-10.11material or BrewerBOND® 305 material
Release Layer: BrewerBOND® 701 material
BrewerBOND® VersaLayer System: BrewerBOND® C1300 series materials with BrewerBOND® T1100 series materials
| Max Throughput | Thermal Stability | LOW STRESS |
|---|---|---|
| 50 WPH | ≤ 400°C |
In the photonic debonding system, a pulsed broadband light source is used to debond temporarily bonded wafer pairs by using an inorganic metal light absorbing layer as a release layer. Photonic debonding is compatible with thinned device wafers less than 20 µm. This method is often desirable for bonded pairs that may have some slight bow/warp because its high tolerance for variations in focal distance to the release layer enables suitable debonding performance.
Bonding Material: BrewerBOND® 305, BrewerBOND® 230, or WaferBOND® HT-10.11 materials
Release Layer: LAL (light absorber layer); not a Brewer Science material but an inorganic layer deposited on the carrier substrate
| Max Throughput | Thermal Stability | LOW STRESS |
|---|---|---|
| 100 WPH | ≤ 400°C |
Debonding Technologies