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October 24-26, 2016 Hiroshima, Japan http://euvl2016.org/ Please look for Tanti Ouattara's poster at 2016 International EUVL Symposium.
Event Read MoreHigh-k metal gate (HKMG) technology has become one of the front-runners for the next generation of CMOS devices. This new technology incorporates a high-k dielectric, which reduces leakage and improves…
Read MoreNew lithographic compositions, for use as middle layers in trilayer processes resist processes can be applied as very thin films with a very thin layer of photoresist being applied to…
Read MoreProcess application engineers often encounter a variety of complex challenges related to deposition by spin coating, as many variables affect the quality of the spin-applied coating. These variables have critical…
Read MoreFabrication of microelectronic devices increasingly involves the creation of high-aspect-ratio structures (those with large height or depth and narrow width, such as trenches, vias, columns, and mesas). These structures provide…
Read MoreLimitations of Moore's Law Ultimately, performance of computers and other electronic products will be limited by transistor size and density. Because the semiconductor industry has pushed to create ever-smaller features…
Read MoreCost of ownership plays an important role in lithography process materials and methods decisions. Process simplifications brought about by layer-to-layer synergy drive significant cost of ownership advantages for multilayer lithography…
Read MoreOne of the most critical variables in spin-coating processes is coating uniformity. In many cases, engineers are challenged with achieving ultralow total thickness variation at high film thicknesses while conserving…
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