San Jose, California
Integration Engineering and Novel Underlayers Presented at SPIE Advanced Lithography + Patterning 2025
Keynote presentation addresses architecture and design impacts on lithography scaling challenges
San Jose, California – February 20, 2025 – Brewer Science, Inc., an industry pioneer in advanced lithography and patterning innovation, will present its ground-breaking developments in addressing scaling challenges at the sub-2-nm nodes at SPIE Advanced Lithography + Patterning 2025 in San Jose, California, February 25 – 26, 2025.
New Transistor Structures for Nodes 2-nm and Below Require Integration Engineering
James Lamb III, Corporate Fellow at Brewer Science, encourages attendees of SPIE Advanced Lithography + Patterning 2025 conference to completely rethink material design and integration, as that is what will be most critical as the industry pushes the limits of sub-2-nm nodes. In his keynote presentation, Mr. Lamb addresses the questions every process engineer should be asking:
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- How can integration engineering improve the compatibility of new materials with existing lithographic processes to streamline design cycles?
- What role do material providers play in overcoming scaling challenges and ensuring quality manufacturing at 2-nm nodes and below?
- How does broadening the scope of material design to include adjacent layers and processes lead to more holistic and efficient product designs?
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Attend An Integration Engineering Approach to Material Design and Development (Keynote Presentation) on February 24, 2025 at 11:00 AM PST in Convention Center, Room 210C to learn more.
EUV Lithography Requires Advanced Underlayers
Dr. Si (Elly) Li, Senior Scientist at Brewer Science, illustrates how underlayers play a critical role in advancing MOR sensitivities for EUV lithography applications. Attendees of her presentation will learn about
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- What specific functionalities in underlayers enhance MOR sensitivity, and how can these be optimized for EUV lithography?
- How do underlayer properties like adhesion and interaction impact the performance of photoresists at sub-2-nm nodes?
- What analytical techniques provide the most actionable insights into the interactions between photoresists and underlayers?
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Attend Development of Underlayers for MOR Sensitivity Improvement on February 26, 2025 at 5:30 PM PST in Convention Center, Hall 2 to learn more.
“Changes in transistor structure are having a significant impact in 3-nm and 2-nm integration, relying on gate-all-around (GAA) and the future complementary field-effect transistor (CFET),” states James Lamb, Corporate Fellow at Brewer Science. “This proves the importance of broadening the scope of material design to include adjacent layers and processes leading to more holistic and efficient product designs. We are excited to present our latest breakthroughs at SPIE Advanced Lithography + Patterning 2025”
For those unable to attend the event, additional information can be obtained by submitting a request at the bottom of our website.
About Brewer Science
Brewer Science is a global leader in developing and manufacturing next-generation materials and processes that foster the technology needed for tomorrow. Since 1981, we’ve expanded our technology portfolio within advanced lithography, advanced packaging, smart devices, and printed electronics to enable cutting-edge microdevices and unique quality monitoring systems for water and air applications. We are Certified Employee-Owned and a Certified B Corporation™, using our business as a force for good. Our headquarters are in Rolla, Missouri, with customer support throughout the world. Learn more at: www.brewerscience.com.
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Company Contact:
Nathan Ayres
Tel: (US) +1.573.364.0444, ext. 1923
Email: nayres@brewerscience.com